Результаты поиска IRFR3710Z

Найдено 13 результатов.

• IRFR3710Z
  International Rectifier — 100V Single N-Channel Automotive HEXFET Power MOSFET in a D-Pak package
• IRFR3710ZTR
  International Rectifier — MOSFET N-CH 100V 42A DPAK
• AUIRFR3710Z
  IR (International Rectifier) — IR (International Rectifier) AUIRFR3710Z Configuration: Single Continuous Drain Current: 56 A Continuous Drain Current Id: 42A Current - Continuous Drain (id) @ 25В° C: 42A Drain Source Voltage Vds: 100V Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 100nC @ 10V Gate Charge Qg: 69 nC Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 2930pF @ 25V Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount On Resistance Rds(on): 15mohm Operating Temperature Range: -55°C To +175°C Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 140W Power Dissipation: 140 W Power Dissipation Pd: 140W Rds On (max) @ Id, Vgs: 18 mOhm @ 33A, 10V Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 18 mOhms Rohs Compliant: Yes Series: HEXFETВ® Transistor Case Style: D-PAK Transistor Polarity: N Channel Vgs(th) (max) @ Id: 4V @ 250ВµA RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 18 mOhms Factory Pack Quantity: 75 Typical Turn-Off Delay Time: 53 ns
• IRFR3710ZPBF
  International Rectifier — MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 15 Milliohms; ID 56A; D-Pak (TO-252AA); -55deg
• IRFR3710ZPBF
  International Rectifier — MOSFET N-CH 100V 42A DPAK
• IRFR3710ZTRL
  International Rectifier — MOSFET N-CH 100V 42A DPAK
• IRFR3710ZTRR
  International Rectifier — MOSFET N-CH 100V 42A DPAK
• AUIRFR3710ZTR
  IR (International Rectifier) — IR (International Rectifier) AUIRFR3710ZTR Configuration: Single Continuous Drain Current: 56 A Current - Continuous Drain (id) @ 25В° C: 42A Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 100nC @ 10V Gate Charge Qg: 69 nC Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 2930pF @ 25V Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 140W Power Dissipation: 140 W Rds On (max) @ Id, Vgs: 18 mOhm @ 33A, 10V Resistance Drain-source Rds (on): 18 mOhms Series: HEXFETВ® Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 250ВµA
• IRFR3710ZTRPBF
  International Rectifier — MOSFET N-CH 100V 42A DPAK
• AUIRFR3710ZTRL
  IR (International Rectifier) — IR (International Rectifier) AUIRFR3710ZTRL Configuration: Single Continuous Drain Current: 56 A Current - Continuous Drain (id) @ 25В° C: 42A Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 100nC @ 10V Gate Charge Qg: 69 nC Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 2930pF @ 25V Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 140W Power Dissipation: 140 W Rds On (max) @ Id, Vgs: 18 mOhm @ 33A, 10V Resistance Drain-source Rds (on): 18 mOhms Series: HEXFETВ® Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 250ВµA RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 18 mOhms Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 53 ns