Результаты поиска IRFR024NTRR
Найдено 4 результатов.
- International Rectifier — MOSFET N-CH 55V 17A DPAK
- IR (International Rectifier) — IR (International Rectifier) AUIRFR024NTRR RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 55 V Continuous Drain Current: 17 A Resistance Drain-Source RDS (on): 75 mOhms Configuration: Single Quint Source Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Package / Case: DPAK Fall Time: 27 ns Forward Transconductance gFS (Max / Min): 4.5 S Gate Charge Qg: 20 nC Minimum Operating Temperature: - 55 C Power Dissipation: 45 W Rise Time: 34 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 19 ns
- IR (International Rectifier) — IR (International Rectifier) AUIRFR024NTRR RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 55 V Continuous Drain Current: 17 A Resistance Drain-Source RDS (on): 75 mOhms Configuration: Single Quint Source Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Package / Case: DPAK Fall Time: 27 ns Forward Transconductance gFS (Max / Min): 4.5 S Gate Charge Qg: 20 nC Minimum Operating Temperature: - 55 C Power Dissipation: 45 W Rise Time: 34 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 19 ns
- IR (International Rectifier) — IR (International Rectifier) IRFR024NTRRPBF Current, Drain: 17 A Gate Charge, Total: 20 nC Lead Free Status / Rohs Status: RoHS Compliant part Package Type: D-Pak (TO-252AA) Polarization: N-Channel Power Dissipation: 45 W Resistance, Drain To Source On: 0.075 Ohm Temperature, Operating, Maximum: +175 В°C Temperature, Operating, Minimum: -55 В°C Time, Turn-off Delay: 19 ns Time, Turn-on Delay: 4.9 ns Transconductance, Forward: 4.5 S Voltage, Breakdown, Drain To Source: 55 V Voltage, Forward, Diode: 1.3 V Voltage, Gate To Source: В±20 V