Результаты поиска IRF7341
Найдено 20 результатов.
- International Rectifier — 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
- International Rectifier — 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
- International Rectifier — 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
- International Rectifier — Pwr MOSFET, 55V Dual N-Ch. HEXFET; SO-8
- International Rectifier — MOSFET 2N-CH 55V 4.7A 8-SOIC
- International Rectifier — 55V Single N-Channel HEXFET Power MOSFET in a SO-8 package
- International Rectifier — 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
- IR (International Rectifier) — IR (International Rectifier) AUIRF7341Q RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 5.1 A Resistance Drain-Source RDS (on): 65 mOhms Configuration: Dual Mounting Style: SMD/SMT Package / Case: SOIC-8 Gate Charge Qg: 29 nC Minimum Operating Temperature: - 55 C Power Dissipation: 2.4 W Factory Pack Quantity: 95 Typical Turn-Off Delay Time: 31 ns
- International Rectifier — MOSFET, Power; Dual N-Ch; VDSS 55V; RDS(ON) 0.05Ohm; ID 5.1A; SO-8; PD 2.4W; VGS +/-20V
- International Rectifier — MOSFET, DUAL N-CHANNEL, 55V, 4.7A, SO-8, INDUSTRIAL QUALIFIED