Результаты поиска IRF7319

Найдено 10 результатов.

  • International Rectifier — 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
  • International Rectifier — 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
  • International Rectifier — MOSFET, DUAL N/P-CHANNEL, 30V, 6.5A, SO-8
  • International Rectifier — MOSFET N+P 30V 4.9A 8-SOIC
  • IR (International Rectifier) — IR (International Rectifier) AUIRF7319Q Continuous Drain Current: 6.5 A Continuous Drain Current Id: 6.5A Drain Source Voltage Vds: 30V Drain-source Breakdown Voltage: 30 V Gate Charge Qg: 22 nC Gate-source Breakdown Voltage: 20 V Module Configuration: Dual Mounting Style: SMD/SMT On Resistance Rds(on): 0.029ohm Package / Case: SOIC-8 Power Dissipation: 2 W Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 46 mOhms Rohs Compliant: Yes Transistor Polarity: N And P Channel
  • International Rectifier — 30V DUAL N- AND P- CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE
  • International Rectifier — MOSFET N+P 30V 4.9A 8-SOIC
  • International Rectifier — MOSFET N+P 30V 4.9A 8-SOIC
  • International Rectifier — MOSFET N+P 30V 4.9A 8-SOIC
  • IR (International Rectifier) — IR (International Rectifier) AUIRF7319QTR Continuous Drain Current: 6.5 A Continuous Drain Current Id: 6.5A Drain Source Voltage Vds: 30V Drain-source Breakdown Voltage: 30 V Gate Charge Qg: 22 nC Gate-source Breakdown Voltage: 20 V Module Configuration: Dual Mounting Style: SMD/SMT On Resistance Rds(on): 0.032ohm Package / Case: SOIC-8 Power Dissipation: 2 W Resistance Drain-source Rds (on): 46 mOhms Rohs Compliant: Yes Transistor Polarity: N And P Channel RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 46 mOhms Factory Pack Quantity: 4000




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Оптовые поставки с онлайн складов и складов производителей.