Результаты поиска IRF7103
Найдено 22 результатов.
- International Rectifier — 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
- International Rectifier — MOSFET N-CH 50V 3A 8-SOIC
- International Rectifier — 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
- International Rectifier — 50V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE
- International Rectifier — MOSFET N-CH 50V 3A 8-SOIC
- International Rectifier — 50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package
- IR (International Rectifier) — IR (International Rectifier) IRF7103QTR Continuous Drain Current - 25 Deg C: 3A Continuous Drain Current Id: 50A Current Rating: 50A Dc Collector Current: 3A No. Of Pins: 8 On Resistance Rds(on): 1.5ohm Peak Reflow Compatible (260 C): No Rohs Compliant: No Transconductance: 3.4A/V Transistor Polarity: N Channel
- IR (International Rectifier) — IR (International Rectifier) AUIRF7103Q Configuration: Dual Dual Drain Continuous Drain Current: 3 A Continuous Drain Current Id: 3A Drain Source Voltage Vds: 50V Drain-source Breakdown Voltage: 50 V Gate Charge Qg: 10 nC Gate-source Breakdown Voltage: +/- 20 V Minimum Operating Temperature: - 55 C Module Configuration: Dual N Channel Mounting Style: SMD/SMT On Resistance Rds(on): 0.13ohm Package / Case: SOIC N Power Dissipation: 2.4 W Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 130 mOhms Rohs Compliant: Yes Transistor Polarity: Dual N Channel
- International Rectifier — MOSFET, Power; Dual N-Ch; VDSS 50V; RDS(ON) 200 Milliohms; ID 1.5A; SO-8; PD 2.4W
- International Rectifier — 50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package