Результаты поиска IRF3205

Найдено 35 результатов.

• IRF3205
  International Rectifier — 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
• IRF3205L
  International Rectifier — MOSFET N-CH 55V 110A TO-262
• IRF3205Z
  International Rectifier — MOSFET N-CH 55V 75A TO-220AB
• IRF3205S
  International Rectifier — 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
• IRF3205ZL
  International Rectifier — MOSFET N-CH 55V 75A TO-262
• IRF3205ZS
  International Rectifier — MOSFET N-CH 55V 75A D2PAK
• AUIRF3205
  IR (International Rectifier) — IR (International Rectifier) AUIRF3205 Continuous Drain Current: 98 A Drain-source Breakdown Voltage: 55 V Factory Pack Quantity: 50 Gate Charge Qg: 97.3 nC Mounting Style: Through Hole Package / Case: TO-220AB Power Dissipation: 150 W Resistance Drain-source Rds (on): 8 mOhms Rohs: yes Transistor Polarity: N-Channel RoHS: yes Drain-Source Breakdown Voltage: 55 V Resistance Drain-Source RDS (on): 8 mOhms
• IRF3205PBF
  International Rectifier — MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 8 Milliohms; ID 110A; TO-220AB; PD 200W; gFS 44S
• IRF3205PBF
  International Rectifier — MOSFET N-CH 55V 110A TO-220AB
• AUIRF3205Z
  IR (International Rectifier) — IR (International Rectifier) AUIRF3205Z Configuration: Single Continuous Drain Current: 110 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 110nC @ 10V Gate Charge Qg: 76 nC Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 3450pF @ 25V Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-220-3 Power - Max: 170W Power Dissipation: 170 W Rds On (max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V Resistance Drain-source Rds (on): 6.5 mOhms Series: HEXFETВ® Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 250ВµA