Результаты поиска IRF1404Z

Найдено 23 результатов.

• IRF1404Z
  IR (International Rectifier) —
• IRF1404Z
  IR (International Rectifier) —
• IRF1404ZL
  International Rectifier — MOSFET N-CH 40V 75A TO-262
• IRF1404ZS
  IR (International Rectifier) — IR (International Rectifier) IRF1404ZS Case: D2-pak Date_code: 08+ Quantity: 20000
• IRF1404ZS
  IR (International Rectifier) — IR (International Rectifier) IRF1404ZS Case: D2-pak Date_code: 08+ Quantity: 20000
• AUIRF1404Z
  IR (International Rectifier) — IR (International Rectifier) AUIRF1404Z Current - Continuous Drain (id) @ 25В° C: 160A Drain Source Voltage Vds: 40V Drain To Source Voltage (vdss): 40V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 150nC @ 10V Input Capacitance (ciss) @ Vds: 4340pF @ 25V Mounting Type: Through Hole On Resistance Rds(on): 2.7mohm Operating Temperature Range: -55°C To +175°C Package / Case: TO-220-3 Power - Max: 200W Rds On (max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V Rds(on) Test Voltage Vgs: 10V Rohs Compliant: Yes Series: HEXFETВ® Transistor Case Style: TO-220AB Transistor Polarity: N Channel Vgs(th) (max) @ Id: 4V @ 250ВµA
• IRF1404ZPBF
  International Rectifier — MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 2.7 Milliohms; ID 190A; TO-220AB; PD 220W; -55de
• IRF1404ZPBF
  International Rectifier — MOSFET N-CH 40V 75A TO-220AB
• AUIRF1404ZS
  IR (International Rectifier) — IR (International Rectifier) AUIRF1404ZS Current - Continuous Drain (id) @ 25В° C: 160A Drain Source Voltage Vds: 40V Drain To Source Voltage (vdss): 40V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 150nC @ 10V Input Capacitance (ciss) @ Vds: 4340pF @ 25V Mounting Type: Surface Mount On Resistance Rds(on): 2.7mohm Operating Temperature Range: -55°C To +175°C Package / Case: TO-263-3, DВІPak (2 leads + Tab), TO-263AB Power - Max: 200W Rds On (max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V Rds(on) Test Voltage Vgs: 10V Rohs Compliant: Yes Series: HEXFETВ® Transistor Case Style: D2-PAK Transistor Polarity: N Channel Vgs(th) (max) @ Id: 4V @ 250ВµA RoHS: yes Drain-Source Breakdown Voltage: 40 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 180 A Resistance Drain-Source RDS (on): 3.7 mOhms Configuration: Single Mounting Style: SMD/SMT Gate Charge Qg: 100 nC Minimum Operating Temperature: - 55 C Power Dissipation: 200 W Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 36 ns
• AUIRF1404ZL
  IR (International Rectifier) — IR (International Rectifier) AUIRF1404ZL Current - Continuous Drain (id) @ 25В° C: 160A Drain Source Voltage Vds: 40V Drain To Source Voltage (vdss): 40V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 150nC @ 10V Input Capacitance (ciss) @ Vds: 4340pF @ 25V Mounting Type: Through Hole On Resistance Rds(on): 2.7mohm Operating Temperature Range: -55°C To +175°C Package / Case: TO-262-3 (Straight Leads) Power - Max: 200W Rds On (max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V Rds(on) Test Voltage Vgs: 10V Rohs Compliant: Yes Series: HEXFETВ® Transistor Case Style: TO-262 Transistor Polarity: N Channel Vgs(th) (max) @ Id: 4V @ 250ВµA RoHS: yes Drain-Source Breakdown Voltage: 40 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 180 A Resistance Drain-Source RDS (on): 3.7 mOhms Configuration: Single Mounting Style: Through Hole Gate Charge Qg: 100 nC Minimum Operating Temperature: - 55 C Power Dissipation: 200 W Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 36 ns