Результаты поиска IRF1010E

Найдено 31 результатов.

• IRF1010E
  International Rectifier — 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
• IRF1010EL
  International Rectifier — MOSFET N-CH 60V 84A TO-262
• IRF1010EZ
  International Rectifier — MOSFET N-CH 60V 75A TO-220AB
• IRF1010ES
  International Rectifier — 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
• IRF1010EZL
  International Rectifier — MOSFET N-CH 60V 75A TO-262
• IRF1010EZS
  International Rectifier — MOSFET N-CH 60V 75A D2PAK
• IRF1010EPBF
  International Rectifier — MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 12 Milliohms; ID 84A; TO-220AB; PD 200W; gFS 69S
• IRF1010EPBF
  International Rectifier — MOSFET N-CH 60V 84A TO-220AB
• AUIRF1010EZ
  IR (International Rectifier) — IR (International Rectifier) AUIRF1010EZ Configuration: Single Continuous Drain Current: 84 A Continuous Drain Current Id: 84A Current - Continuous Drain (id) @ 25В° C: 75A Drain Source Voltage Vds: 60V Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 86nC @ 10V Gate Charge Qg: 58 nC Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 2810pF @ 25V Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole On Resistance Rds(on): 0.0068ohm Package / Case: TO-220-3 Power - Max: 140W Power Dissipation: 140 W Power Dissipation Pd: 140W Rds On (max) @ Id, Vgs: 8.5 mOhm @ 51A, 10V Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 8.5 mOhms Rohs Compliant: Yes Series: HEXFETВ® Transistor Polarity: N Channel Vgs(th) (max) @ Id: 4V @ 250ВµA RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 8.5 mOhms Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 38 ns
• IRF1010EZPBF
  International Rectifier — MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 6.8 Milliohms; ID 84A; TO-220AB; PD 140W; -55deg