Результаты поиска IPD105N03LG

Найдено 5 результатов.

• IPD105N03LG
  Infineon Technologies — MOSFET N-CH 30V 35A TO252-3
• IPD105N03LG
  Infineon Technologies — MOSFET N-CH 30V 35A TO252-3
• IPD105N03LG
  Infineon Technologies — MOSFET N-CH 30V 35A TO252-3
• IPD105N03LGATMA1
  Infineon Technologies — Infineon Technologies IPD105N03LGATMA1 Continuous Drain Current: 35 A Drain-source Breakdown Voltage: 30 V Fall Time: 2.4 ns Forward Transconductance Gfs (max / Min): 51 S Gate Charge Qg: 14 nC Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: PG-TO252-3-11 Part # Aliases: IPD105N03LGBTMA1 SP000796910 Power Dissipation: 38 W Resistance Drain-source Rds (on): 10.5 mOhms Rise Time: 14 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 14 ns RoHS: yes Drain-Source Breakdown Voltage: 30 V Resistance Drain-Source RDS (on): 10.5 mOhms Forward Transconductance gFS (Max / Min): 51 S Typical Turn-Off Delay Time: 14 ns
• IPD105N03LGATMA1
  Infineon Technologies — Infineon Technologies IPD105N03LGATMA1 Continuous Drain Current: 35 A Drain-source Breakdown Voltage: 30 V Fall Time: 2.4 ns Forward Transconductance Gfs (max / Min): 51 S Gate Charge Qg: 14 nC Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: PG-TO252-3-11 Part # Aliases: IPD105N03LGBTMA1 SP000796910 Power Dissipation: 38 W Resistance Drain-source Rds (on): 10.5 mOhms Rise Time: 14 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 14 ns RoHS: yes Drain-Source Breakdown Voltage: 30 V Resistance Drain-Source RDS (on): 10.5 mOhms Forward Transconductance gFS (Max / Min): 51 S Typical Turn-Off Delay Time: 14 ns