Результаты поиска IPD090N03LG

Найдено 6 результатов.

• IPD090N03LG
  Infineon Technologies — MOSFET N-CH 30V 40A TO252-3
• IPD090N03LG
  Infineon Technologies — MOSFET N-CH 30V 40A TO252-3
• IPD090N03LG
  Infineon Technologies — MOSFET N-CH 30V 40A TO252-3
• IPD090N03LGE8177
  Infineon Technologies —
• IPD090N03LGATMA1
  Infineon Technologies — Infineon Technologies IPD090N03LGATMA1 Configuration: Single Continuous Drain Current: 40 A Drain-source Breakdown Voltage: 30 V Fall Time: 2.6 ns Forward Transconductance Gfs (max / Min): 53 S Gate Charge Qg: 15 nC Gate-source Breakdown Voltage: 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: TO-252 Part # Aliases: IPD090N03LGBTMA1 SP000680636 Power Dissipation: 42 W Resistance Drain-source Rds (on): 7.5 mOhms Rise Time: 3 ns Rohs: yes Transistor Polarity: N-Channel RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 7.5 mOhms Forward Transconductance gFS (Max / Min): 53 S
• IPD090N03LGATMA1
  Infineon Technologies — Infineon Technologies IPD090N03LGATMA1 Configuration: Single Continuous Drain Current: 40 A Drain-source Breakdown Voltage: 30 V Fall Time: 2.6 ns Forward Transconductance Gfs (max / Min): 53 S Gate Charge Qg: 15 nC Gate-source Breakdown Voltage: 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: TO-252 Part # Aliases: IPD090N03LGBTMA1 SP000680636 Power Dissipation: 42 W Resistance Drain-source Rds (on): 7.5 mOhms Rise Time: 3 ns Rohs: yes Transistor Polarity: N-Channel RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 7.5 mOhms Forward Transconductance gFS (Max / Min): 53 S