Результаты поиска IPD075N03LG

Найдено 6 результатов.

• IPD075N03LG
  Infineon Technologies — MOSFET N-CH 30V 50A TO252-3
• IPD075N03LG
  Infineon Technologies — MOSFET N-CH 30V 50A TO252-3
• IPD075N03LG
  Infineon Technologies — MOSFET N-CH 30V 50A TO252-3
• IPD075N03LG_10
  Infineon Technologies —
• IPD075N03LGATMA1
  Infineon Technologies — Infineon Technologies IPD075N03LGATMA1 Configuration: Single Continuous Drain Current: 50 A Drain-source Breakdown Voltage: 30 V Fall Time: 2.8 ns Forward Transconductance Gfs (max / Min): 61 S Gate Charge Qg: 18 nC Gate-source Breakdown Voltage: 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: TO-252 Part # Aliases: IPD075N03LGBTMA1 SP000680634 Power Dissipation: 47 W Resistance Drain-source Rds (on): 6.3 mOhms Rise Time: 3.6 ns Rohs: yes Transistor Polarity: N-Channel RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 6.3 mOhms Forward Transconductance gFS (Max / Min): 61 S
• IPD075N03LGATMA1
  Infineon Technologies — Infineon Technologies IPD075N03LGATMA1 Configuration: Single Continuous Drain Current: 50 A Drain-source Breakdown Voltage: 30 V Fall Time: 2.8 ns Forward Transconductance Gfs (max / Min): 61 S Gate Charge Qg: 18 nC Gate-source Breakdown Voltage: 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: TO-252 Part # Aliases: IPD075N03LGBTMA1 SP000680634 Power Dissipation: 47 W Resistance Drain-source Rds (on): 6.3 mOhms Rise Time: 3.6 ns Rohs: yes Transistor Polarity: N-Channel RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 6.3 mOhms Forward Transconductance gFS (Max / Min): 61 S