Результаты поиска GT30J121(Q)

Найдено 2 результатов.

• GT30J121
  TOSHIBA — Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
• GT30J121(Q)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor GT30J121(Q) Current - Collector (ic) (max): 30A Igbt Type: - Input Type: Standard Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: * Power - Max: 170W Series: - Vce(on) (max) @ Vge, Ic: 2.45V @ 15V, 30A Voltage - Collector Emitter Breakdown (max): 600V