Результаты поиска GT25Q102(Q)

Найдено 2 результатов.

• GT25Q102
  TOSHIBA — Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
• GT25Q102(Q)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor GT25Q102(Q) Current - Collector (ic) (max): 25A Igbt Type: - Input Type: Standard Mounting Type: Through Hole Package / Case: * Power - Max: 200W Series: - Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 25A Voltage - Collector Emitter Breakdown (max): 1200V