Результаты поиска GT15Q102(Q)

Найдено 2 результатов.

• GT15Q102
  TOSHIBA — INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
• GT15Q102(Q)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor GT15Q102(Q) Collector- Emitter Voltage Vceo Max: 1200 V Configuration: Single Continuous Collector Current Ic Max: 15 A Current - Collector (ic) (max): 15A Igbt Type: - Input Type: Standard Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Gate Emitter Voltage: 20 V Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: * Power - Max: 170W Series: - Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 15A Voltage - Collector Emitter Breakdown (max): 1200V