Результаты поиска GP2S27T2J00F

Найдено 3 результатов.

• GP2S27T2J00F
  Sharp Microelectronics — Sharp Microelectronics GP2S27T2J00F Current - Collector (ic) (max): 20mA Current - Dc Forward (if): 50mA Mounting Type: Surface Mount Operating Temperature: -25В°C ~ 85В°C Output Type: Phototransistor Package / Case: 4-SMD Response Time: 20Вµs, 20Вµs Sensing Distance: 0.028" (0.7mm) Sensing Method: Reflective Series: - Voltage - Collector Emitter Breakdown (max): 35V Other Names: 425-2569-2, GP2S27T2J00F
• GP2S27T2J00F
  Sharp Microelectronics — Sharp Microelectronics GP2S27T2J00F Current - Collector (ic) (max): 20mA Current - Dc Forward (if): 50mA Mounting Type: Surface Mount Operating Temperature: -25В°C ~ 85В°C Output Type: Phototransistor Package / Case: 4-SMD Response Time: 20Вµs, 20Вµs Sensing Distance: 0.028" (0.7mm) Sensing Method: Reflective Series: - Voltage - Collector Emitter Breakdown (max): 35V Other Names: 425-2569-2, GP2S27T2J00F
• GP2S27T2J00F
  Sharp Microelectronics — Sharp Microelectronics GP2S27T2J00F Current - Collector (ic) (max): 20mA Current - Dc Forward (if): 50mA Mounting Type: Surface Mount Operating Temperature: -25В°C ~ 85В°C Output Type: Phototransistor Package / Case: 4-SMD Response Time: 20Вµs, 20Вµs Sensing Distance: 0.028" (0.7mm) Sensing Method: Reflective Series: - Voltage - Collector Emitter Breakdown (max): 35V Other Names: 425-2569-2, GP2S27T2J00F