Результаты поиска GP2S27T

Найдено 15 результатов.

• GP2S27T
  Sharp Microelectronics — Sharp Microelectronics GP2S27T Current - Collector (ic) (max): 20mA Current - Dc Forward (if): 50mA Mounting Type: Surface Mount Operating Temperature: -25В°C ~ 85В°C Output Type: Phototransistor Package / Case: 4-SMD Response Time: 20Вµs, 20Вµs Sensing Distance: 0.031" (0.8mm) Sensing Method: Reflective Series: - Voltage - Collector Emitter Breakdown (max): 35V Other Names: 425-1094-2
• GP2S27T
  Sharp Microelectronics — Sharp Microelectronics GP2S27T Current - Collector (ic) (max): 20mA Current - Dc Forward (if): 50mA Mounting Type: Surface Mount Operating Temperature: -25В°C ~ 85В°C Output Type: Phototransistor Package / Case: 4-SMD Response Time: 20Вµs, 20Вµs Sensing Distance: 0.031" (0.8mm) Sensing Method: Reflective Series: - Voltage - Collector Emitter Breakdown (max): 35V Other Names: 425-1094-2
• GP2S27T6
  Sharp Electronics — Sharp Electronics GP2S27T6 Collector Current (dc) (max): 20mA Collector-emitter Voltage: 35V Fall Time: 100000ns Forward Current: 50mA Mounting: Surface Mount Number Of Elements: 1 Operating Temp Range: -25C to 85C Operating Temperature Classification: Commercial Output Device: Phototransistor Pin Count: 4 Power Dissipation: 75mW Reverse Breakdown Voltage: 6V Rise Time: 100000ns Type: Reflective
• gp2s27t300f
  Sharp Microelectronics —
• GP2S27T3J00F
  Sharp Microelectronics — Sharp Microelectronics GP2S27T3J00F Current - Collector (ic) (max): 20mA Current - Dc Forward (if): 50mA Mounting Type: Surface Mount Operating Temperature: -25В°C ~ 85В°C Output Type: Phototransistor Package / Case: 4-SMD Response Time: 20Вµs, 20Вµs Sensing Distance: 0.028" (0.7mm) Sensing Method: Reflective Series: - Voltage - Collector Emitter Breakdown (max): 35V Other Names: 425-2570-2, GP2S27T3J00F
• GP2S27T3J00F
  Sharp Microelectronics — Sharp Microelectronics GP2S27T3J00F Current - Collector (ic) (max): 20mA Current - Dc Forward (if): 50mA Mounting Type: Surface Mount Operating Temperature: -25В°C ~ 85В°C Output Type: Phototransistor Package / Case: 4-SMD Response Time: 20Вµs, 20Вµs Sensing Distance: 0.028" (0.7mm) Sensing Method: Reflective Series: - Voltage - Collector Emitter Breakdown (max): 35V Other Names: 425-2570-2, GP2S27T3J00F
• GP2S27T3J00F
  Sharp Microelectronics — Sharp Microelectronics GP2S27T3J00F Current - Collector (ic) (max): 20mA Current - Dc Forward (if): 50mA Mounting Type: Surface Mount Operating Temperature: -25В°C ~ 85В°C Output Type: Phototransistor Package / Case: 4-SMD Response Time: 20Вµs, 20Вµs Sensing Distance: 0.028" (0.7mm) Sensing Method: Reflective Series: - Voltage - Collector Emitter Breakdown (max): 35V Other Names: 425-2570-2, GP2S27T3J00F
• GP2S27T2J00F
  Sharp Microelectronics — Sharp Microelectronics GP2S27T2J00F Current - Collector (ic) (max): 20mA Current - Dc Forward (if): 50mA Mounting Type: Surface Mount Operating Temperature: -25В°C ~ 85В°C Output Type: Phototransistor Package / Case: 4-SMD Response Time: 20Вµs, 20Вµs Sensing Distance: 0.028" (0.7mm) Sensing Method: Reflective Series: - Voltage - Collector Emitter Breakdown (max): 35V Other Names: 425-2569-2, GP2S27T2J00F
• GP2S27T2J00F
  Sharp Microelectronics — Sharp Microelectronics GP2S27T2J00F Current - Collector (ic) (max): 20mA Current - Dc Forward (if): 50mA Mounting Type: Surface Mount Operating Temperature: -25В°C ~ 85В°C Output Type: Phototransistor Package / Case: 4-SMD Response Time: 20Вµs, 20Вµs Sensing Distance: 0.028" (0.7mm) Sensing Method: Reflective Series: - Voltage - Collector Emitter Breakdown (max): 35V Other Names: 425-2569-2, GP2S27T2J00F
• GP2S27T2J00F
  Sharp Microelectronics — Sharp Microelectronics GP2S27T2J00F Current - Collector (ic) (max): 20mA Current - Dc Forward (if): 50mA Mounting Type: Surface Mount Operating Temperature: -25В°C ~ 85В°C Output Type: Phototransistor Package / Case: 4-SMD Response Time: 20Вµs, 20Вµs Sensing Distance: 0.028" (0.7mm) Sensing Method: Reflective Series: - Voltage - Collector Emitter Breakdown (max): 35V Other Names: 425-2569-2, GP2S27T2J00F