Результаты поиска GP1S59J0000F

Найдено 2 результатов.

• GP1S59J0000F
  Sharp Microelectronics — Sharp Microelectronics GP1S59J0000F Current - Collector (ic) (max): 20mA Current - Dc Forward (if): 50mA Mounting Type: Through Hole Operating Temperature: -25В°C ~ 85В°C Output Configuration: Phototransistor Package / Case: PCB Mount Response Time: 3Вµs, 4Вµs Sensing Distance: 0.165" (4.2mm) Sensing Method: Transmissive Series: - Type: Unamplified Voltage - Collector Emitter Breakdown (max): 35V Product Category: Optical Switches, Transmissive, Phototransistor Output RoHS: yes Output Device: Phototransistor Slot Width: 4.2 mm Aperture Width: 0.5 mm Collector- Emitter Voltage VCEO Max: 35 V Maximum Collector Current: 20 mA Forward Current: 50 mA Maximum Operating Temperature: + 85 C Minimum Operating Temperature: - 25 C Fall Time: 20 us Power Dissipation: 75 mW Rise Time: 15 us Factory Pack Quantity: 100 Other Names: 425-1976-5
• GP1S59J0000F
  Sharp Microelectronics — Sharp Microelectronics GP1S59J0000F Current - Collector (ic) (max): 20mA Current - Dc Forward (if): 50mA Mounting Type: Through Hole Operating Temperature: -25В°C ~ 85В°C Output Configuration: Phototransistor Package / Case: PCB Mount Response Time: 3Вµs, 4Вµs Sensing Distance: 0.165" (4.2mm) Sensing Method: Transmissive Series: - Type: Unamplified Voltage - Collector Emitter Breakdown (max): 35V Product Category: Optical Switches, Transmissive, Phototransistor Output RoHS: yes Output Device: Phototransistor Slot Width: 4.2 mm Aperture Width: 0.5 mm Collector- Emitter Voltage VCEO Max: 35 V Maximum Collector Current: 20 mA Forward Current: 50 mA Maximum Operating Temperature: + 85 C Minimum Operating Temperature: - 25 C Fall Time: 20 us Power Dissipation: 75 mW Rise Time: 15 us Factory Pack Quantity: 100 Other Names: 425-1976-5