Результаты поиска FODM8801C
Найдено 2 результатов.
- Fairchild Semiconductor — Fairchild Semiconductor FODM8801C RoHS: yes Maximum Collector Emitter Voltage: 75 V Maximum Collector Emitter Saturation Voltage: 0.4 V Isolation Voltage: 3750 Vrms Maximum Forward Diode Voltage: 1.8 V Maximum Power Dissipation: 300 mW Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 40 C Package / Case: Mini Flat-4 Forward Current: 20 mA Maximum Reverse Diode Voltage: 6 V Number of Channels per Chip: 1 Channel Output Device: NPN Phototransistor Factory Pack Quantity: 3000
- Fairchild Semiconductor — Fairchild Semiconductor FODM8801CR2 RoHS: yes Maximum Collector Emitter Voltage: 75 V Isolation Voltage: 3750 Vrms Current Transfer Ratio: 560 % Maximum Forward Diode Voltage: 1.8 V Maximum Input Diode Current: 200 mA Maximum Power Dissipation: 40 mW Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 40 C Package / Case: miniflat-4 Forward Current: 20 mA Maximum Fall Time: 5.5 us Maximum Rise Time: 5 us Number of Channels per Chip: 1 Channel Output Device: NPN Phototransistor Factory Pack Quantity: 2500