Результаты поиска FF400R12KL4C

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• FF400R12KL4C
  Infineon Technologies — Infineon Technologies FF400R12KL4C Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.1 V Continuous Collector Current at 25 C: 650 A Gate-Emitter Leakage Current: 600 nA Power Dissipation: 2.8 kW Maximum Operating Temperature: + 125 C Package / Case: IHM Maximum Gate Emitter Voltage: +/- 20 V Minimum Operating Temperature: - 40 C Mounting Style: Screw Factory Pack Quantity: 8