Результаты поиска FF200R12KS4

Найдено 4 результатов.

• FF200R12KS4
  Infineon Technologies — Infineon Technologies FF200R12KS4 Channel Type: N Collector- Emitter Voltage Vceo Max: 1200 V Collector-emitter Saturation Voltage: 3.2 V Collector-emitter Voltage: 1.2kV Configuration: Dual Continuous Collector Current At 25 C: 275 A Gate To Emitter Voltage (max): В±20V Gate-emitter Leakage Current: 400 nA Housing: 62 mm Ic (max): 200.0 A Lead Free Status / Rohs Status: Compliant Maximum Gate Emitter Voltage: +/- 20 V Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 40 C Mounting: Screw Mounting Style: Screw Operating Temperature (max): 125C Operating Temperature (min): -40C Operating Temperature Classification: Automotive Package / Case: 62MM Power Dissipation: 1.4 KW Technology: IGBT2 Fast Vce(sat) (typ): 3.2 V Product Category: IGBT Modules Product: IGBT Silicon Modules Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 3.2 V Continuous Collector Current at 25 C: 275 A Gate-Emitter Leakage Current: 400 nA Factory Pack Quantity: 500
• FF200R12KS4
  Infineon Technologies — Infineon Technologies FF200R12KS4 Channel Type: N Collector- Emitter Voltage Vceo Max: 1200 V Collector-emitter Saturation Voltage: 3.2 V Collector-emitter Voltage: 1.2kV Configuration: Dual Continuous Collector Current At 25 C: 275 A Gate To Emitter Voltage (max): В±20V Gate-emitter Leakage Current: 400 nA Housing: 62 mm Ic (max): 200.0 A Lead Free Status / Rohs Status: Compliant Maximum Gate Emitter Voltage: +/- 20 V Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 40 C Mounting: Screw Mounting Style: Screw Operating Temperature (max): 125C Operating Temperature (min): -40C Operating Temperature Classification: Automotive Package / Case: 62MM Power Dissipation: 1.4 KW Technology: IGBT2 Fast Vce(sat) (typ): 3.2 V Product Category: IGBT Modules Product: IGBT Silicon Modules Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 3.2 V Continuous Collector Current at 25 C: 275 A Gate-Emitter Leakage Current: 400 nA Factory Pack Quantity: 500
• FF200R12KS4
  Infineon Technologies — Infineon Technologies FF200R12KS4 Channel Type: N Collector- Emitter Voltage Vceo Max: 1200 V Collector-emitter Saturation Voltage: 3.2 V Collector-emitter Voltage: 1.2kV Configuration: Dual Continuous Collector Current At 25 C: 275 A Gate To Emitter Voltage (max): В±20V Gate-emitter Leakage Current: 400 nA Housing: 62 mm Ic (max): 200.0 A Lead Free Status / Rohs Status: Compliant Maximum Gate Emitter Voltage: +/- 20 V Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 40 C Mounting: Screw Mounting Style: Screw Operating Temperature (max): 125C Operating Temperature (min): -40C Operating Temperature Classification: Automotive Package / Case: 62MM Power Dissipation: 1.4 KW Technology: IGBT2 Fast Vce(sat) (typ): 3.2 V Product Category: IGBT Modules Product: IGBT Silicon Modules Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 3.2 V Continuous Collector Current at 25 C: 275 A Gate-Emitter Leakage Current: 400 nA Factory Pack Quantity: 500
• FF200R12KS4
  Infineon Technologies — Infineon Technologies FF200R12KS4 Channel Type: N Collector- Emitter Voltage Vceo Max: 1200 V Collector-emitter Saturation Voltage: 3.2 V Collector-emitter Voltage: 1.2kV Configuration: Dual Continuous Collector Current At 25 C: 275 A Gate To Emitter Voltage (max): В±20V Gate-emitter Leakage Current: 400 nA Housing: 62 mm Ic (max): 200.0 A Lead Free Status / Rohs Status: Compliant Maximum Gate Emitter Voltage: +/- 20 V Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 40 C Mounting: Screw Mounting Style: Screw Operating Temperature (max): 125C Operating Temperature (min): -40C Operating Temperature Classification: Automotive Package / Case: 62MM Power Dissipation: 1.4 KW Technology: IGBT2 Fast Vce(sat) (typ): 3.2 V Product Category: IGBT Modules Product: IGBT Silicon Modules Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 3.2 V Continuous Collector Current at 25 C: 275 A Gate-Emitter Leakage Current: 400 nA Factory Pack Quantity: 500