Результаты поиска FDI2532

Найдено 3 результатов.

• FDI2532
  Fairchild Semiconductor — MOSFETs 150V N-Ch UltraFET Trench
• FDI2532
  Fairchild Semiconductor — MOSFET N-CH 150V 79A TO-262AB
• FDI2532_Q
  Fairchild Semiconductor — Fairchild Semiconductor FDI2532_Q Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 150 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 79 A Resistance Drain-Source RDS (on): 0.016 Ohms Configuration: Single Maximum Operating Temperature: + 175 C Mounting Style: Through Hole Package / Case: TO-262 Fall Time: 17 ns Minimum Operating Temperature: - 55 C Power Dissipation: 310 W Rise Time: 30 ns Typical Turn-Off Delay Time: 39 ns