Результаты поиска FDG6304P

Найдено 8 результатов.

• FDG6304P
  Fairchild Semiconductor — MOSFETs SC70-6 P-CH -25V
• FDG6304P
  Fairchild Semiconductor — IC FET DGTL P-CHAN DUAL SC70-6
• FDG6304P
  Fairchild Semiconductor — IC FET DGTL P-CHAN DUAL SC70-6
• FDG6304P
  Fairchild Semiconductor — IC FET DGTL P-CHAN DUAL SC70-6
• FDG6304P_Q
  Fairchild Semiconductor — Fairchild Semiconductor FDG6304P_Q Configuration: Dual Continuous Drain Current: - 0.41 A Drain-source Breakdown Voltage: - 25 V Fall Time: 8 ns Forward Transconductance Gfs (max / Min): 0.9 S Gate-source Breakdown Voltage: - 8 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SC-70-6 Power Dissipation: 0.3 W Resistance Drain-source Rds (on): 1.1 Ohms Rise Time: 8 ns Transistor Polarity: P-Channel Typical Turn-off Delay Time: 55 ns Drain-Source Breakdown Voltage: - 25 V Gate-Source Breakdown Voltage: - 8 V Resistance Drain-Source RDS (on): 1.1 Ohms Forward Transconductance gFS (Max / Min): 0.9 S Typical Turn-Off Delay Time: 55 ns
• FDG6304P_NL
  Fairchild Semiconductor — Dual P-Channel Digital FET
• FDG6304P_D87Z
  Fairchild Semiconductor — MOSFETs SC70-6 P-CH -25V
• FDG6304P_D87Z
  Fairchild Semiconductor — MOSFET P-CH DUAL 25V SC70-6