Результаты поиска FDG314P

Найдено 4 результатов.

• FDG314P
  Fairchild Semiconductor — MOSFETs SC70-6 P-CH -25V
• FDG314P
  Fairchild Semiconductor — MOSFET P-CH 25V 0.65A SC70-6
• FDG314P_Q
  Fairchild Semiconductor — Fairchild Semiconductor FDG314P_Q Configuration: Single Quad Drain Continuous Drain Current: - 0.65 A Drain-source Breakdown Voltage: - 25 V Fall Time: 8 ns Forward Transconductance Gfs (max / Min): 0.9 S Gate-source Breakdown Voltage: +/- 8 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SC-70-6 Power Dissipation: 0.75 W Product Category: MOSFET Resistance Drain-source Rds (on): 1.1 Ohms Rise Time: 8 ns Transistor Polarity: P-Channel Typical Turn-off Delay Time: 55 ns Drain-Source Breakdown Voltage: - 25 V Gate-Source Breakdown Voltage: +/- 8 V Resistance Drain-Source RDS (on): 1.1 Ohms Forward Transconductance gFS (Max / Min): 0.9 S Typical Turn-Off Delay Time: 55 ns
• FDG314P_NL
  Fairchild Semiconductor — Digital FET - P-Channel