Результаты поиска FDFS2P103

Найдено 10 результатов.

• FDFS2P103
  Fairchild Semiconductor — MOSFETs P-Ch PowerTrench Integrated
• FDFS2P103
  Fairchild Semiconductor — MOSFET P-CH 30V 5.3A 8-SOIC
• FDFS2P103
  Fairchild Semiconductor — MOSFET P-CH 30V 5.3A 8-SOIC
• FDFS2P103
  Fairchild Semiconductor — MOSFET P-CH 30V 5.3A 8-SOIC
• FDFS2P103A
  Fairchild Semiconductor — MOSFETs P-Ch PowerTrench Integrated
• FDFS2P103A
  Fairchild Semiconductor — MOSFET P-CH 30V 5.3A 8-SOIC
• FDFS2P103A
  Fairchild Semiconductor — MOSFET P-CH 30V 5.3A 8-SOIC
• FDFS2P103A
  Fairchild Semiconductor — MOSFET P-CH 30V 5.3A 8-SOIC
• FDFS2P103_Q
  Fairchild Semiconductor — Fairchild Semiconductor FDFS2P103_Q Product Category: MOSFET Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: - 30 V Gate-Source Breakdown Voltage: +/- 25 V Continuous Drain Current: - 5.3 A Resistance Drain-Source RDS (on): 0.059 Ohms Configuration: Single Dual Drain Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOIC-8 Narrow Fall Time: 9 ns Forward Transconductance gFS (Max / Min): 10 S Minimum Operating Temperature: - 55 C Power Dissipation: 2 W Rise Time: 13 ns Typical Turn-Off Delay Time: 14 ns
• FDFS2P103A_Q
  Fairchild Semiconductor — Fairchild Semiconductor FDFS2P103A_Q Configuration: Single Dual Drain Continuous Drain Current: - 5.3 A Drain-source Breakdown Voltage: - 30 V Fall Time: 10 ns Forward Transconductance Gfs (max / Min): 8.9 S Gate-source Breakdown Voltage: +/- 25 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOIC-8 Narrow Power Dissipation: 2 W Product Category: MOSFET Resistance Drain-source Rds (on): 0.059 Ohms Rise Time: 16 ns Transistor Polarity: P-Channel Typical Turn-off Delay Time: 15 ns Drain-Source Breakdown Voltage: - 30 V Gate-Source Breakdown Voltage: +/- 25 V Resistance Drain-Source RDS (on): 0.059 Ohms Forward Transconductance gFS (Max / Min): 8.9 S Typical Turn-Off Delay Time: 15 ns