Результаты поиска FDD13AN06A0

Найдено 8 результатов.

• FDD13AN06A0
  Fairchild Semiconductor — MOSFETs N-Channel PwrTrench
• FDD13AN06A0
  Fairchild Semiconductor — MOSFET N-CH 60V 50A D-PAK
• FDD13AN06A0
  Fairchild Semiconductor — MOSFET N-CH 60V 50A D-PAK
• FDD13AN06A0
  Fairchild Semiconductor — MOSFET N-CH 60V 50A D-PAK
• FDD13AN06A0_NL
  Fairchild Semiconductor — N-Channel PowerTrench MOSFET, 60V, 50A, 0.0135
• FDD13AN06A0_10
  Fairchild Semiconductor —
• FDD13AN06A0_F085
  Fairchild Semiconductor — Fairchild Semiconductor FDD13AN06A0_F085 Configuration: Single Continuous Drain Current: 50 A Current - Continuous Drain (id) @ 25В° C: 9.9A Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 29nC @ 10V Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 1350pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 115W Power Dissipation: 115 W Rds On (max) @ Id, Vgs: 13.5 mOhm @ 50A, 10V Resistance Drain-source Rds (on): 0.0135 Ohms Series: PowerTrenchВ® Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 250ВµA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.0135 Ohms Fall Time: 25 ns Rise Time: 77 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 26 ns
• FDD13AN06A0_F085
  Fairchild Semiconductor — Fairchild Semiconductor FDD13AN06A0_F085 Configuration: Single Continuous Drain Current: 50 A Current - Continuous Drain (id) @ 25В° C: 9.9A Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 29nC @ 10V Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 1350pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 115W Power Dissipation: 115 W Rds On (max) @ Id, Vgs: 13.5 mOhm @ 50A, 10V Resistance Drain-source Rds (on): 0.0135 Ohms Series: PowerTrenchВ® Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 250ВµA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.0135 Ohms Fall Time: 25 ns Rise Time: 77 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 26 ns