Результаты поиска FDD10AN06A0
Найдено 5 результатов.
- Fairchild Semiconductor — MOSFETs 60V 50a .15 Ohms/VGS=1V
- Fairchild Semiconductor — MOSFET N-CH 60V 50A D-PAK
- Fairchild Semiconductor — MOSFET N-CH 60V 50A D-PAK
- Fairchild Semiconductor — MOSFET N-CH 60V 50A D-PAK
- Fairchild Semiconductor — Fairchild Semiconductor FDD10AN06A0_F085 RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 50 A Rds On: 9.4 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Package / Case: TO-252AA-3 Fall Time: 32 ns Gate Charge Qg: 28 nC Minimum Operating Temperature: - 55 C Power Dissipation: 135 W Rise Time: 79 ns Series: FDD10 Typical Turn-Off Delay Time: 32 ns Unit Weight: 0.009184 oz