Результаты поиска FDC6306P

Найдено 8 результатов.

• FDC6306P
  Fairchild Semiconductor — MOSFETs SSOT-6 P-CH -20V
• FDC6306P
  Fairchild Semiconductor — MOSFET P-CHAN DUAL 20V SSOT6
• FDC6306P
  Fairchild Semiconductor — MOSFET P-CHAN DUAL 20V SSOT6
• FDC6306P
  Fairchild Semiconductor — MOSFET P-CHAN DUAL 20V SSOT6
• FDC6306P_Q
  Fairchild Semiconductor — Dual P-Channel 2.5V Specified PowerTrench MOSFET
• FDC6306P_NL
  Fairchild Semiconductor — Dual P-Channel 2.5V Specified PowerTrench MOSFET
• FDC6306P_NF40
  Fairchild Semiconductor — Dual P-Channel 2.5V Specified PowerTrench MOSFET
• FDC6306P_D87Z
  Fairchild Semiconductor — Fairchild Semiconductor FDC6306P_D87Z Configuration: Dual Continuous Drain Current: 1.9 A Drain-source Breakdown Voltage: 20 V Fall Time: 9 ns Gate-source Breakdown Voltage: +/- 8 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SuperSOT-6 Power Dissipation: 960 mW Resistance Drain-source Rds (on): 170 mOhms at 4.5 V Rise Time: 9 ns Transistor Polarity: P-Channel Typical Turn-off Delay Time: 14 ns Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 8 V Resistance Drain-Source RDS (on): 170 mOhms at 4.5 V Typical Turn-Off Delay Time: 14 ns