Результаты поиска ESR10EZPJ131

Найдено 3 результатов.

• IPP029N06N
  Infineon Technologies — MOSFET N-CH 60V 24A TO220
• ESR10EZPJ131
  Rohm Semiconductor — RES SMD 130 OHM 5% 0.4W 0805
• IPP029N06NAKSA1
  Infineon Technologies — Infineon Technologies IPP029N06NAKSA1 RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 60 V Continuous Drain Current: 100 A Resistance Drain-Source RDS (on): 2.9 mOhms Maximum Operating Temperature: + 175 C Mounting Style: Through Hole Package / Case: PG-TO220-3 Fall Time: 8 ns Forward Transconductance gFS (Max / Min): 160 S Gate Charge Qg: 56 nC Minimum Operating Temperature: - 55 C Power Dissipation: 136 W Rise Time: 15 ns Typical Turn-Off Delay Time: 30 ns