Результаты поиска EL357N-G

Найдено 2 результатов.

• EL357N-G
  Everlight Electronics — Everlight Electronics EL357N-G Product Category: Transistor Output Optocouplers RoHS: yes Maximum Collector Emitter Voltage: 80 V Maximum Collector Emitter Saturation Voltage: 0.2 V Isolation Voltage: 3750 Vrms Current Transfer Ratio: 50 % to 600 % Maximum Forward Diode Voltage: 1.4 V Maximum Input Diode Current: 20 mA Maximum Power Dissipation: 200 mW Maximum Operating Temperature: + 100 C Minimum Operating Temperature: - 55 C Package / Case: SOP-4 Forward Current: 20 mA Maximum Reverse Diode Voltage: 4 V Number of Channels per Chip: 1 Channel Output Device: NPN Phototransistor
• EL357N-G
  Everlight Electronics — Everlight Electronics EL357N-G Product Category: Transistor Output Optocouplers RoHS: yes Maximum Collector Emitter Voltage: 80 V Maximum Collector Emitter Saturation Voltage: 0.2 V Isolation Voltage: 3750 Vrms Current Transfer Ratio: 50 % to 600 % Maximum Forward Diode Voltage: 1.4 V Maximum Input Diode Current: 20 mA Maximum Power Dissipation: 200 mW Maximum Operating Temperature: + 100 C Minimum Operating Temperature: - 55 C Package / Case: SOP-4 Forward Current: 20 mA Maximum Reverse Diode Voltage: 4 V Number of Channels per Chip: 1 Channel Output Device: NPN Phototransistor