Результаты поиска BUK9675-55A,118

Найдено 2 результатов.

• BUK9675-55A,118
  NXP Semiconductors — NXP Semiconductors BUK9675-55A,118 Configuration: Single Continuous Drain Current: 20 A Current - Continuous Drain (id) @ 25В° C: 20A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 10 V ID_COMPONENTS: 1951464 Input Capacitance (ciss) @ Vds: 643pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: DВІPak, TO-263 (2 leads + tab) Power - Max: 62W Power Dissipation: 62000 mW Rds On (max) @ Id, Vgs: 68 mOhm @ 10A, 10V Resistance Drain-source Rds (on): 0.068 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 10 V Resistance Drain-Source RDS (on): 0.068 Ohms Fall Time: 33 ns Rise Time: 47 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 28 ns Part # Aliases: /T3 BUK9675-55A Other Names: 934056269118, BUK9675-55A /T3
• BUK9675-55A,118
  NXP Semiconductors — NXP Semiconductors BUK9675-55A,118 Configuration: Single Continuous Drain Current: 20 A Current - Continuous Drain (id) @ 25В° C: 20A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 10 V ID_COMPONENTS: 1951464 Input Capacitance (ciss) @ Vds: 643pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: DВІPak, TO-263 (2 leads + tab) Power - Max: 62W Power Dissipation: 62000 mW Rds On (max) @ Id, Vgs: 68 mOhm @ 10A, 10V Resistance Drain-source Rds (on): 0.068 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 10 V Resistance Drain-Source RDS (on): 0.068 Ohms Fall Time: 33 ns Rise Time: 47 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 28 ns Part # Aliases: /T3 BUK9675-55A Other Names: 934056269118, BUK9675-55A /T3