Результаты поиска BUK9508-55A

Найдено 2 результатов.

• BUK9508-55A
  NXP — MOSFETs - Arrays RAIL PWR-MOS
• BUK9508-55A,127
  NXP Semiconductors — NXP Semiconductors BUK9508-55A,127 Configuration: Single Continuous Drain Current: 125 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fall Time: 167 ns Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 92nC @ 5V Gate-source Breakdown Voltage: +/- 10 V Input Capacitance (ciss) @ Vds: 6021pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 253W Power Dissipation: 253 W Rds On (max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0075 Ohms Rise Time: 175 ns Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Other Names: 934055644127, BUK9508-55A