Результаты поиска BUK7L11-34ARC

Найдено 3 результатов.

• BUK7L11-34ARC
  NXP — MOSFETs - Arrays TRENCHPLUS MOSFET
• BUK7L11-34ARC,127
  NXP Semiconductors — NXP Semiconductors BUK7L11-34ARC,127 Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 34V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 53nC @ 10V Input Capacitance (ciss) @ Vds: 2506pF @ 25V Mounting Type: Through Hole Package / Case: TO-220 Power - Max: 172W Rds On (max) @ Id, Vgs: 11 mOhm @ 30A, 10V Series: TrenchMOSв„ў Vgs(th) (max) @ Id: 3.8V @ 1mA Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 34 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 89 A Resistance Drain-Source RDS (on): 0.0097 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Fall Time: 118 ns Minimum Operating Temperature: - 55 C Power Dissipation: 172 W Rise Time: 92 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 127 ns Other Names: 934057492127, BUK7L11-34ARC
• BUK7L11-34ARC,127
  NXP Semiconductors — NXP Semiconductors BUK7L11-34ARC,127 Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 34V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 53nC @ 10V Input Capacitance (ciss) @ Vds: 2506pF @ 25V Mounting Type: Through Hole Package / Case: TO-220 Power - Max: 172W Rds On (max) @ Id, Vgs: 11 mOhm @ 30A, 10V Series: TrenchMOSв„ў Vgs(th) (max) @ Id: 3.8V @ 1mA Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 34 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 89 A Resistance Drain-Source RDS (on): 0.0097 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Fall Time: 118 ns Minimum Operating Temperature: - 55 C Power Dissipation: 172 W Rise Time: 92 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 127 ns Other Names: 934057492127, BUK7L11-34ARC