Результаты поиска BUK753R1-40B

Найдено 4 результатов.

• BUK753R1-40B
  NXP — MOSFETs - Arrays HIGH PERF TRENCHMOS
• BUK753R140B
  NXP Semiconductors — NXP Semiconductors BUK753R140B Date_code: 07+ Quantity: 200
• BUK753R1-40B,127
  NXP Semiconductors — NXP Semiconductors BUK753R1-40B,127 Configuration: Single Continuous Drain Current: 75 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 40V Drain-source Breakdown Voltage: 40 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 94nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950524 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 300W Power Dissipation: 300000 mW Rds On (max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0031 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 40 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 3.1 mOhms Fall Time: 90 ns Rise Time: 82 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 141 ns Part # Aliases: BUK753R1-40B Other Names: 934057094127::BUK753R1-40B::BUK753R1-40B
• BUK753R1-40B,127
  NXP Semiconductors — NXP Semiconductors BUK753R1-40B,127 Configuration: Single Continuous Drain Current: 75 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 40V Drain-source Breakdown Voltage: 40 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 94nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950524 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 300W Power Dissipation: 300000 mW Rds On (max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0031 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 40 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 3.1 mOhms Fall Time: 90 ns Rise Time: 82 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 141 ns Part # Aliases: BUK753R1-40B Other Names: 934057094127::BUK753R1-40B::BUK753R1-40B