Результаты поиска BUK7528-55

Найдено 5 результатов.

• BUK7528-55
  NXP — MOSFETs - Arrays RAIL PWR-MOS
• BUK7528-55A
  NXP — MOSFETs - Arrays RAIL PWR-MOS
• BUK7528-55,127
  NXP Semiconductors — NXP Semiconductors BUK7528-55,127 Current - Continuous Drain (id) @ 25В° C: 40A Drain To Source Voltage (vdss): 55V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Input Capacitance (ciss) @ Vds: 1300pF @ 25V Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 96W Rds On (max) @ Id, Vgs: 28 mOhm @ 20A, 10V Series: TrenchMOSв„ў Vgs(th) (max) @ Id: 4V @ 1mA Other Names: 934050370127, BUK7528-55
• BUK7528-55A,127
  NXP Semiconductors — NXP Semiconductors BUK7528-55A,127 Configuration: Single Continuous Drain Current: 42 A Current - Continuous Drain (id) @ 25В° C: 42A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950483 Input Capacitance (ciss) @ Vds: 1165pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 99W Power Dissipation: 99000 mW Rds On (max) @ Id, Vgs: 28 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Rds On: 28 mOhms Brand: NXP Semiconductors Fall Time: 43 ns Rise Time: 68 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 83 ns Part # Aliases: BUK7528-55A Other Names: 934056257127, BUK7528-55A
• BUK7528-55A,127
  NXP Semiconductors — NXP Semiconductors BUK7528-55A,127 Configuration: Single Continuous Drain Current: 42 A Current - Continuous Drain (id) @ 25В° C: 42A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950483 Input Capacitance (ciss) @ Vds: 1165pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 99W Power Dissipation: 99000 mW Rds On (max) @ Id, Vgs: 28 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Rds On: 28 mOhms Brand: NXP Semiconductors Fall Time: 43 ns Rise Time: 68 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 83 ns Part # Aliases: BUK7528-55A Other Names: 934056257127, BUK7528-55A