Результаты поиска BUK7509-75A

Найдено 3 результатов.

• BUK7509-75A
  NXP — MOSFETs - Arrays RAIL PWR-MOS
• BUK7509-75A,127
  NXP Semiconductors — NXP Semiconductors BUK7509-75A,127 Configuration: Single Continuous Drain Current: 108 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 75V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950482 Input Capacitance (ciss) @ Vds: 6760pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 230W Power Dissipation: 211000 mW Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.009 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.009 Ohms Fall Time: 55 ns Rise Time: 58 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 78 ns Part # Aliases: BUK7509-75A Other Names: 934056370127, BUK7509-75A
• BUK7509-75A,127
  NXP Semiconductors — NXP Semiconductors BUK7509-75A,127 Configuration: Single Continuous Drain Current: 108 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 75V Drain-source Breakdown Voltage: 55 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950482 Input Capacitance (ciss) @ Vds: 6760pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 230W Power Dissipation: 211000 mW Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.009 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.009 Ohms Fall Time: 55 ns Rise Time: 58 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 78 ns Part # Aliases: BUK7509-75A Other Names: 934056370127, BUK7509-75A