Результаты поиска BUK7207-30B
Найдено 5 результатов.
- Philips — Trenchmos (tm) standard level FET
- Philips — Trenchmos (tm) standard level FET
- Philips — BUK7207-30B; Trenchmos (tm) standard level FET
- NXP Semiconductors — NXP Semiconductors BUK7207-30B,118 Configuration: Single Continuous Drain Current: 112 A Current - Continuous Drain (id) @ 25В° C: 75A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 34nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1950685 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 185 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: DPak, TO-252 (2 leads+tab), SC-63 Power - Max: 167W Power Dissipation: 167000 mW Rds On (max) @ Id, Vgs: 7 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.007 Ohm @ 10 V Series: TrenchMOSв„ў Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.007 Ohms Fall Time: 76 ns Rise Time: 85 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 55 ns Part # Aliases: /T3 BUK7207-30B Other Names: 934057606118::BUK7207-30B /T3::BUK7207-30B /T3
- NXP Semiconductors — NXP Semiconductors BUK7207-30B /T3 Configuration: Single Continuous Drain Current: 112 A Drain-source Breakdown Voltage: 30 V Factory Pack Quantity: 2500 Fall Time: 76 ns Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 185 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-428 Part # Aliases: BUK7207-30B,118 Power Dissipation: 167 W Product Category: MOSFET Resistance Drain-source Rds (on): 0.007 Ohms Rise Time: 85 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 55 ns