Результаты поиска BUJ105AB

Найдено 3 результатов.

• BUJ105AB
  Philips — Silicon Diffused Power Transistor
• BUJ105AB,118
  NXP Semiconductors — NXP Semiconductors BUJ105AB,118 Collector- Emitter Voltage Vceo Max: 400 V Continuous Collector Current: 8 A Current - Collector (ic) (max): 8A Current - Collector Cutoff (max): 100ВµA Dc Collector/base Gain Hfe Min: 10 Dc Current Gain (hfe) (min) @ Ic, Vce: 13 @ 500mA, 5V Emitter- Base Voltage Vebo: 700 V Frequency - Transition: - ID_COMPONENTS: 1949234 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 16 A Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: DВІPak, TO-263 (2 leads + tab) Power - Max: 125W Power Dissipation: 125 W Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 1V @ 800mA, 4A Voltage - Collector Emitter Breakdown (max): 400V RoHS: yes Configuration: Single Collector- Base Voltage VCBO: 700 V Collector- Emitter Voltage VCEO Max: 400 V Emitter- Base Voltage VEBO: 700 V Maximum DC Collector Current: 16 A DC Collector/Base Gain hfe Min: 10 Maximum Power Dissipation: 125 W Factory Pack Quantity: 800 Other Names: 934056850118, BUJ105AB /T3
• BUJ105AB,118
  NXP Semiconductors — NXP Semiconductors BUJ105AB,118 Collector- Emitter Voltage Vceo Max: 400 V Continuous Collector Current: 8 A Current - Collector (ic) (max): 8A Current - Collector Cutoff (max): 100ВµA Dc Collector/base Gain Hfe Min: 10 Dc Current Gain (hfe) (min) @ Ic, Vce: 13 @ 500mA, 5V Emitter- Base Voltage Vebo: 700 V Frequency - Transition: - ID_COMPONENTS: 1949234 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 16 A Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: DВІPak, TO-263 (2 leads + tab) Power - Max: 125W Power Dissipation: 125 W Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 1V @ 800mA, 4A Voltage - Collector Emitter Breakdown (max): 400V RoHS: yes Configuration: Single Collector- Base Voltage VCBO: 700 V Collector- Emitter Voltage VCEO Max: 400 V Emitter- Base Voltage VEBO: 700 V Maximum DC Collector Current: 16 A DC Collector/Base Gain hfe Min: 10 Maximum Power Dissipation: 125 W Factory Pack Quantity: 800 Other Names: 934056850118, BUJ105AB /T3