Результаты поиска BTA316B-600E,118

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• BTA316B-600E,118
  NXP Semiconductors — NXP Semiconductors BTA316B-600E,118 Breakover Current Ibo Max: 150 A Configuration: Single Current - Gate Trigger (igt) (max): 10mA Current - Hold (ih) (max): 15mA Current - Non Rep. Surge 50, 60hz (itsm): 140A, 150A Current - On State (it (rms) (max): 16A Forward Voltage Drop: 1.3 V Gate Trigger Current (igt): 10 mA Gate Trigger Voltage (vgt): 0.4 V Holding Current (ih Max): 15 mA ID_COMPONENTS: 1948588 Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 40 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Off-state Leakage Current @ Vdrm Idrm: 0.1 mA On-state Rms Current (it Rms): 16 A Package / Case: DВІPak, TO-263 (2 leads + tab) Rated Repetitive Off-state Voltage Vdrm: 600 V Repetitive Peak Forward Blocking Voltage: 600 V Series: - Triac Type: Logic - Sensitive Gate Voltage - Gate Trigger (vgt) (max): 1.5V Voltage - Off State: 600V RoHS: yes On-State RMS Current (It RMS): 16 A Non Repetitive On-State Current: 150 A Rated Repetitive Off-State Voltage VDRM: 600 V Off-State Leakage Current @ VDRM IDRM: 0.1 mA On-State Voltage: 1.3 V Holding Current (Ih Max): 15 mA Gate Trigger Voltage (Vgt): 0.8 V Gate Trigger Current (Igt): 10 mA Factory Pack Quantity: 800 Other Names: 934060108118::BTA316B-600E /T3::BTA316B-600E /T3