Результаты поиска BTA2008-600D,412

Найдено 2 результатов.

• BTA2008-600D,412
  Philips Semiconductors — Philips Semiconductors BTA2008-600D,412 RoHS: yes On-State RMS Current (It RMS): 0.8 A Non Repetitive On-State Current: 9.9 A Rated Repetitive Off-State Voltage VDRM: 600 V Off-State Leakage Current @ VDRM IDRM: 0.1 mA On-State Voltage: 1.35 V Holding Current (Ih Max): 10 mA Gate Trigger Voltage (Vgt): 0.9 V Gate Trigger Current (Igt): 5 mA Maximum Operating Temperature: + 125 C Mounting Style: Through Hole Package / Case: TO-92-3 Minimum Operating Temperature: - 40 C Factory Pack Quantity: 1000
• BTA2008-600D,412
  NXP Semiconductors — Philips Semiconductors BTA2008-600D,412 RoHS: yes On-State RMS Current (It RMS): 0.8 A Non Repetitive On-State Current: 9.9 A Rated Repetitive Off-State Voltage VDRM: 600 V Off-State Leakage Current @ VDRM IDRM: 0.1 mA On-State Voltage: 1.35 V Holding Current (Ih Max): 10 mA Gate Trigger Voltage (Vgt): 0.9 V Gate Trigger Current (Igt): 5 mA Maximum Operating Temperature: + 125 C Mounting Style: Through Hole Package / Case: TO-92-3 Minimum Operating Temperature: - 40 C Factory Pack Quantity: 1000