Результаты поиска BT258S-800R,118
Найдено 2 результатов.
- NXP Semiconductors —
- NXP Semiconductors — NXP Semiconductors BT258S-800R,118 Breakover Current Ibo Max: 82 A Current - Gate Trigger (igt) (max): 200ВµA Current - Hold (ih) (max): 6mA Current - Non Rep. Surge 50, 60hz (itsm): 75A, 82A Current - Off State (max): 2.5mA Current - On State (it (av)) (max): 5A Current - On State (it (rms) (max): 8A Current - On State (it (rms)) (max): 8A Forward Voltage Drop: 1.3 V Gate Trigger Current (igt): 50 uA Gate Trigger Voltage (vgt): 0.4 V Holding Current (ih Max): 6 mA ID_COMPONENTS: 1948364 Maximum Gate Peak Inverse Voltage: 5 V Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 40 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Off-state Leakage Current @ Vdrm Idrm: 0.1 mA On-state Rms Current (it Rms): 8 A Operating Temperature: -40В°C ~ 150В°C Package / Case: DPak, TO-252 (2 leads+tab), SC-63 Rated Repetitive Off-state Voltage Vdrm: 800 V Scr Type: Sensitive Gate Voltage - Gate Trigger (vgt) (max): 1.5V Voltage - Off State: 800V Voltage - On State (vtm) (max): 1.6V Product Category: SCRs RoHS: yes Breakover Current IBO Max: 82 A Rated Repetitive Off-State Voltage VDRM: 800 V Off-State Leakage Current @ VDRM IDRM: 0.1 mA On-State RMS Current (It RMS): 8 A Gate Trigger Voltage (Vgt): 0.4 V Gate Trigger Current (Igt): 50 uA Holding Current (Ih Max): 6 mA Factory Pack Quantity: 2500 Part # Aliases: /T3 BT258S-800R Other Names: 934048790118, BT258S-800R /T3