Результаты поиска BSZ035N03MSG
Найдено 4 результатов.
- Infineon Technologies — MOSFET N-CH 30V 40A TSDSON-8
- Infineon Technologies — MOSFET N-CH 30V 40A TSDSON-8
- Infineon Technologies — MOSFET N-CH 30V 40A TSDSON-8
- Infineon Technologies — Infineon Technologies BSZ035N03MSGATMA1 Mfr Package Description: GREEN, PLASTIC, TSDSON-8 EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: C BEND Terminal Finish: NOT SPECIFIED Terminal Position: DUAL Number of Terminals: 5 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 18 A DS Breakdown Voltage-Min: 30 V Avalanche Energy Rating (Eas): 150 mJ Drain-source On Resistance-Max: 0.0043 ohm Pulsed Drain Current-Max (IDM): 160 A