Результаты поиска BSV52

Найдено 32 результатов.

• BSV52
  Fairchild Semiconductor — Small Signal Transistors Switching Transistor NPN
• BSV52
  Fairchild Semiconductor — TRANSISTOR NPN 12V 200MA SOT-23
• BSV52
  Fairchild Semiconductor — TRANSISTOR NPN 12V 200MA SOT-23
• BSV52
  Fairchild Semiconductor — TRANSISTOR NPN 12V 200MA SOT-23
• BSV52L
  ON Semiconductor — Switching Transistor
• BSV52R
  Ultra CEMI — Tranzystor przeВіВ±czajВ±cy
• BSV52TA
  Zetex Semiconductors — Zetex Semiconductors BSV52TA Collector- Base Voltage Vcbo: 20 V Collector- Emitter Voltage Vceo Max: 12 V Configuration: Single Dc Collector/base Gain Hfe Min: 25 at 1 mA at 1 V, 40 at 10 mA at 1 V, 25 at 50 mA at 1 V Dc Current Gain Hfe Max: 25 at 1 mA at 1 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 500 MHz Maximum Dc Collector Current: 0.1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 330 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-23 Transistor Polarity: NPN Collector- Base Voltage VCBO: 20 V Collector- Emitter Voltage VCEO Max: 12 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 500 MHz DC Collector/Base Gain hfe Min: 25 at 1 mA at 1 V, 40 at 10 mA at 1 V, 25 at 50 mA at 1 V DC Current Gain hFE Max: 25 at 1 mA at 1 V
• BSV52TA
  Zetex Semiconductors — Zetex Semiconductors BSV52TA Collector- Base Voltage Vcbo: 20 V Collector- Emitter Voltage Vceo Max: 12 V Configuration: Single Dc Collector/base Gain Hfe Min: 25 at 1 mA at 1 V, 40 at 10 mA at 1 V, 25 at 50 mA at 1 V Dc Current Gain Hfe Max: 25 at 1 mA at 1 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 500 MHz Maximum Dc Collector Current: 0.1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 330 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-23 Transistor Polarity: NPN Collector- Base Voltage VCBO: 20 V Collector- Emitter Voltage VCEO Max: 12 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 500 MHz DC Collector/Base Gain hfe Min: 25 at 1 mA at 1 V, 40 at 10 mA at 1 V, 25 at 50 mA at 1 V DC Current Gain hFE Max: 25 at 1 mA at 1 V
• BSV52TC
  Zetex Semiconductors — Zetex Semiconductors BSV52TC Collector- Base Voltage Vcbo: 20 V Collector- Emitter Voltage Vceo Max: 12 V Configuration: Single Dc Current Gain Hfe Max: 25 at 1 mA at 1 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 500 MHz Maximum Dc Collector Current: 0.1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 330 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-23 Transistor Polarity: NPN Collector- Base Voltage VCBO: 20 V Collector- Emitter Voltage VCEO Max: 12 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 500 MHz DC Current Gain hFE Max: 25 at 1 mA at 1 V
• BSV52TC
  Zetex Semiconductors — Zetex Semiconductors BSV52TC Collector- Base Voltage Vcbo: 20 V Collector- Emitter Voltage Vceo Max: 12 V Configuration: Single Dc Current Gain Hfe Max: 25 at 1 mA at 1 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 500 MHz Maximum Dc Collector Current: 0.1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 330 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-23 Transistor Polarity: NPN Collector- Base Voltage VCBO: 20 V Collector- Emitter Voltage VCEO Max: 12 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 500 MHz DC Current Gain hFE Max: 25 at 1 mA at 1 V