Результаты поиска BST82,235

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• BST82,235
  NXP Semiconductors — NXP Semiconductors BST82,235 Current - Continuous Drain (id) @ 25В° C: 190mA Drain To Source Voltage (vdss): 100V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Input Capacitance (ciss) @ Vds: 40pF @ 10V Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Power - Max: 830mW Rds On (max) @ Id, Vgs: 10 Ohm @ 150mA, 5V Series: TrenchMOSв„ў Vgs(th) (max) @ Id: 2V @ 1mA Other Names: 933733110235, BST82 /T3