Результаты поиска BSS670S2L

Найдено 11 результатов.

• BSS670S2L
  Infineon Technologies — MOSFET N-CH 55V 540MA SOT-23
• BSS670S2L
  Infineon Technologies — MOSFET N-CH 55V 540MA SOT-23
• BSS670S2L_06
  Infineon Technologies —
• BSS670S2LL6327
  Infineon Technologies — Infineon Technologies BSS670S2LL6327 Mfr Package Description: ROHS COMPLIANT, PLASTIC PACKAGE-3 Lead Free: Yes EU RoHS Compliant: Yes China RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: MATTE TIN Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.3600 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.5400 A Feedback Cap-Max (Crss): 10 pF DS Breakdown Voltage-Min: 55 V Drain-source On Resistance-Max: 0.8250 ohm
• BSS670S2L L6327
  Infineon Technologies — MOSFET N-CH 55V 540MA SOT-23
• BSS670S2L H6327
  Infineon Technologies — MOSFET N-CH 55V 540MA SOT23
• BSS670S2LL6327XT
  Infineon Technologies — Infineon Technologies BSS670S2LL6327XT Channel Mode: Enhancement Drain Current (max): 540mA Drain Efficiency: Not Required% Drain-source On-res: 0.65Ohm Drain-source On-volt: 55V Frequency (max): Not RequiredMHz Gate-source Voltage (max): В±20V Lead Free Status / Rohs Status: Compliant Mounting: Surface Mount Noise Figure: Not RequireddB Number Of Elements: 1 Operating Temp Range: -55C to 150C Operating Temperature Classification: Military Output Power (max): Not RequiredW Package Type: SOT-23 Pin Count: 3 Polarity: N Power Dissipation: 360mW Power Gain: Not RequireddB Type: Power MOSFET
• BSS670S2LH6327XT
  Infineon Technologies — Infineon Technologies BSS670S2LH6327XT Configuration: Single Continuous Drain Current: 540 mA Drain-source Breakdown Voltage: 55 V Fall Time: 32 nS Gate Charge Qg: 2.26 nC Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: PG-SOT-23 Part # Aliases: BSS670S2L BSS670S2LH6327XTSA1 H6327 Power Dissipation: 360 mW Resistance Drain-source Rds (on): 650 mOhms at 10 V Rise Time: 37 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 21 ns RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 650 mOhms at 10 V Typical Turn-Off Delay Time: 21 ns
• BSS670S2LH6327XT
  Infineon Technologies — Infineon Technologies BSS670S2LH6327XT Configuration: Single Continuous Drain Current: 540 mA Drain-source Breakdown Voltage: 55 V Fall Time: 32 nS Gate Charge Qg: 2.26 nC Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: PG-SOT-23 Part # Aliases: BSS670S2L BSS670S2LH6327XTSA1 H6327 Power Dissipation: 360 mW Resistance Drain-source Rds (on): 650 mOhms at 10 V Rise Time: 37 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 21 ns RoHS: yes Drain-Source Breakdown Voltage: 55 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 650 mOhms at 10 V Typical Turn-Off Delay Time: 21 ns
• BSS670S2LH6327XTSA1
  Infineon Technologies —