Результаты поиска BSS63

Найдено 25 результатов.

• BSS63
  Fairchild Semiconductor — Small Signal Transistors PNP/ 100V/ 200mA
• BSS63
  Fairchild Semiconductor — TRANSISTOR PNP 100V SOT-23
• BSS63L
  ON Semiconductor — High Voltage PNP
• BSS63R
  Zetex Semiconductors — SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
• BSS63TA
  Diodes — Diodes BSS63TA Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 85MHz Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Power - Max: 330mW Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 250mV @ 2.5mA, 25mA Voltage - Collector Emitter Breakdown (max): 100V Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 110 V Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 85 MHz DC Collector/Base Gain hfe Min: 30 at 10 mA at 1 V, 30 at 25 mA at 1 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT DC Current Gain hFE Max: 30 at 10 mA at 1 V Maximum Power Dissipation: 330 mW Minimum Operating Temperature: - 55 C Other Names: BSS63, BSS63ZXTR
• BSS63TA
  Diodes — Diodes BSS63TA Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 85MHz Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Power - Max: 330mW Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 250mV @ 2.5mA, 25mA Voltage - Collector Emitter Breakdown (max): 100V Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 110 V Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 85 MHz DC Collector/Base Gain hfe Min: 30 at 10 mA at 1 V, 30 at 25 mA at 1 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT DC Current Gain hFE Max: 30 at 10 mA at 1 V Maximum Power Dissipation: 330 mW Minimum Operating Temperature: - 55 C Other Names: BSS63, BSS63ZXTR
• BSS63TC
  Zetex Semiconductors — Zetex Semiconductors BSS63TC Collector- Base Voltage Vcbo: 110 V Collector- Emitter Voltage Vceo Max: 100 V Configuration: Single Dc Collector/base Gain Hfe Min: 30 at 10 mA at 1 V Emitter- Base Voltage Vebo: 6 V Gain Bandwidth Product Ft: 85 MHz Maximum Dc Collector Current: 0.1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 330 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-23 Transistor Polarity: PNP Collector- Base Voltage VCBO: 110 V Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 85 MHz DC Collector/Base Gain hfe Min: 30 at 10 mA at 1 V
• BSS63TC
  Zetex Semiconductors — Zetex Semiconductors BSS63TC Collector- Base Voltage Vcbo: 110 V Collector- Emitter Voltage Vceo Max: 100 V Configuration: Single Dc Collector/base Gain Hfe Min: 30 at 10 mA at 1 V Emitter- Base Voltage Vebo: 6 V Gain Bandwidth Product Ft: 85 MHz Maximum Dc Collector Current: 0.1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 330 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-23 Transistor Polarity: PNP Collector- Base Voltage VCBO: 110 V Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 85 MHz DC Collector/Base Gain hfe Min: 30 at 10 mA at 1 V
• BSS63LT1
  ON Semiconductor — Transistors Bipolar- General Purpose 100mA 110V PNP
• BSS63-NL
  Fairchild Semiconductor — Fairchild Semiconductor BSS63-NL Package: SOT-23