Результаты поиска BSS225

Найдено 6 результатов.

• BSS225
  Infineon Technologies — MOSFET N-CH 600V 90MA SOT-89
• BSS225_11
  Infineon Technologies —
• BSS225L6327
  Infineon Technologies — Infineon Technologies BSS225L6327 Mfr Package Description: LEAD FREE, PLASTIC PACKAGE-3 Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: FLAT Terminal Finish: MATTE TIN Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Element Material: SILICON Power Dissipation Ambient-Max: 1 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.0900 A Feedback Cap-Max (Crss): 4.4 pF DS Breakdown Voltage-Min: 600 V Drain-source On Resistance-Max: 45 ohm
• BSS225 L6327
  Infineon Technologies — MOSFET N-CH 600V 90MA SOT-89
• BSS225L6327HTSA1
  Infineon Technologies —
• BSS225H6327FTSA1
  Infineon Technologies — Infineon Technologies BSS225H6327FTSA1 Mfr Package Description: GREEN, PLASTIC PACKAGE-3 Lead Free: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: FLAT Terminal Finish: NOT SPECIFIED Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Element Material: SILICON Power Dissipation Ambient-Max: 1 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.0900 A Feedback Cap-Max (Crss): 4.4 pF DS Breakdown Voltage-Min: 600 V Drain-source On Resistance-Max: 45 ohm