Результаты поиска BSP89,115
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- NXP Semiconductors — NXP Semiconductors BSP89,115 Configuration: Single Dual Drain Continuous Drain Current: 0.375 A Current - Continuous Drain (id) @ 25?° C: 375mA Drain To Source Voltage (vdss): 240V Drain-source Breakdown Voltage: 240 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1951749 Input Capacitance (ciss) @ Vds: 120pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 1.5W Power Dissipation: 1500 mW Rds On (max) @ Id, Vgs: 5 Ohm @ 340mA, 10V Resistance Drain-source Rds (on): 5 Ohm @ 10 V Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 240 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 5000 mOhms Factory Pack Quantity: 1000 Part # Aliases: BSP89 T/R Other Names: 568-1769-2, 934018750115, BSP89 T/R