Результаты поиска BSP129E6327

Найдено 5 результатов.

• BSP129E6327
  Infineon Technologies — MOSFET N-CH 240V 350MA SOT223
• BSP129E6327
  Infineon Technologies — MOSFET N-CH 240V 350MA SOT223
• BSP129E6327T
  Infineon Technologies — MOSFET N-CH 240V 350MA SOT223
• BSP129E6327T
  Infineon Technologies — MOSFET N-CH 240V 350MA SOT223
• BSP129E-6327
  Infineon Technologies — Infineon Technologies BSP129E-6327 Mfr Package Description: SOT-223, 4 PIN Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: NOT SPECIFIED Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Element Material: SILICON Power Dissipation Ambient-Max: 1.7 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: DEPLETION Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 0.2000 A DS Breakdown Voltage-Min: 240 V Drain-source On Resistance-Max: 20 ohm