Результаты поиска BSO604NS2

Найдено 6 результатов.

  • Infineon Technologies — MOSFET N-CHAN DUAL 55V DSO-8
  • Infineon Technologies — MOSFET N-CHAN DUAL 55V DSO-8
  • Infineon Technologies — MOSFET N-CHAN DUAL 55V DSO-8
  • Infineon Technologies —
  • Infineon Technologies —
  • Infineon Technologies — Infineon Technologies BSO604NS2XUMA1 Mfr Package Description: DSO-8 Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: NOT SPECIFIED Terminal Position: DUAL Number of Terminals: 8 Package Body Material: PLASTIC/EPOXY Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE Number of Elements: 2 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 2 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 5 A DS Breakdown Voltage-Min: 55 V Avalanche Energy Rating (Eas): 90 mJ Drain-source On Resistance-Max: 0.0440 ohm Pulsed Drain Current-Max (IDM): 20 A




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Оптовые поставки с онлайн складов и складов производителей.