Результаты поиска BSO301SP

Найдено 7 результатов.

• BSO301SP
  Infineon Technologies — MOSFET P-CH 30V 12.6A DSO-8
• BSO301SP
  Infineon Technologies — MOSFET P-CH 30V 12.6A DSO-8
• BSO301SP
  Infineon Technologies — MOSFET P-CH 30V 12.6A DSO-8
• BSO301SPH
  Infineon Technologies —
• BSO301SP H
  Infineon Technologies — MOSFET P-CH 30V 12.6A DSO-8
• BSO301SPNT
  Infineon Technologies — Infineon Technologies BSO301SPNT Channel Mode: Enhancement Drain Current (max): 14.9A Drain Efficiency: Not Required% Drain-source On-res: 0.008Ohm Drain-source On-volt: 30V Frequency (max): Not RequiredMHz Gate-source Voltage (max): В±20V Lead Free Status / Rohs Status: Compliant Mounting: Surface Mount Noise Figure: Not RequireddB Number Of Elements: 1 Operating Temp Range: -55C to 150C Operating Temperature Classification: Military Output Power (max): Not RequiredW Package Type: DSO Pin Count: 8 Polarity: P Power Dissipation: 1.79W Power Gain: Not RequireddB Type: Power MOSFET
• BSO301SPHXUMA1
  Infineon Technologies — Infineon Technologies BSO301SPHXUMA1 Mfr Package Description: GREEN, PLASTIC, SOP-8 Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: NOT SPECIFIED Terminal Position: DUAL Number of Terminals: 5 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Element Material: SILICON Channel Type: P-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 12.6 A DS Breakdown Voltage-Min: 30 V Avalanche Energy Rating (Eas): 248 mJ Drain-source On Resistance-Max: 0.0080 ohm Pulsed Drain Current-Max (IDM): 60 A